Domain wall magnetoresistance MR of an impure magnetic semiconductor layer is studied theoretically within the semiclassical approach. The effect of the Dresselhaus spin-orbit interaction is taken into account and it is shown that this interaction can enhance the domain wall MR. In the absence of Dresselhaus interaction, the domain wall MR decreases monotonously with the domain wall width but presence of the Dresselhaus coupling prevents this reduction for a range of the domain wall thicknesses. It is also revealed that the Dresselhaus spin-orbit interaction is more effective than the Rashba term in producing domain wall resistance in a typical magnetic semiconductor.
