The Rashba- and Dresselhaus-Induced Spin Accumulation in the Diluted Magnetic Semiconductor Nanowire Containing a Domain Wall, By Vahid Fallahi

Research

Title	The Rashba- and Dresselhaus-Induced Spin Accumulation in the Diluted Magnetic Semiconductor Nanowire Containing a Domain Wall
Type	Article
Keywords	Domain walls · Semiconductor nanowires · Spin accumulation · Spin–orbit coupling
Researchers	Vahid Fallahi، Majid Ghanaatshoar، Nayere Tajielyato

Abstract

We have investigated the influence of spin accumulation on the domain wall resistance in the presence of the Rashba and the Dresselhaus spin–orbit interactions. In this order, we have employed a quantum kinetic model based on the Wigner distribution function formalism. Using the single-electron Hamiltonian and following the approach of Šimánek and Rebei (Phys. Rev. B 71:172405, 2005), we derive the coupled differential equations for transverse spin accumulation components and then calculate its contribution to the resistance of a domain wall. The results show that both the Rashba and the Dresselhaus spin–orbit interactions enhance the transverse spin accumulation and consequently increase the domain wall resistance.