Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors, By Vahid Fallahi

Research

Title	Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors
Type	Article
Keywords	Anisotropic magnetoresistance (AMR), antiferromagnetic (AFM), ferromagnetic (FM), magnetic anisotropy, magnetic sensor planar Hall effect
Researchers	Fatjon Qejvanaj، Muhammad Zubair، Jan A. Persson، Seyed Majid Mohseni Armaki، Vahid Fallahi، Sohrab Redjai Sani، Sunjea Chung، Quang Tuan Le، Fredrik Magnusson، Johan Åkerman

Abstract

In this paper, we present a new material stack for planar Hall effect bridge (PHEB) sensors and a detailed investigation of the sensitivity and noise properties of PHEB sensors made from these. The sputter deposited material stack was based on a ferromagnetic (FM) NiFe sensing layer surrounded by two layers of anti-FM IrMn. This material stack enables implementation of a thick NiFe layer without loss of sensitivity. We present an improvement in detectivity in the PHEB by changing the shape and the materials of the corners between the sensors in a meander shape. A significant reduction of noise also comes from the thick NiFe layer, due to the reduced resistance of the sensor.