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Title
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The Rashba- and Dresselhaus-Induced Spin Accumulation in the Diluted Magnetic Semiconductor Nanowire Containing a Domain Wall
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Type
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JournalPaper
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Keywords
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Domain walls · Semiconductor nanowires · Spin accumulation · Spin–orbit coupling
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Abstract
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We have investigated the influence of spin accumulation on the domain wall resistance in the presence of the Rashba and the Dresselhaus spin–orbit interactions. In this order, we have employed a quantum kinetic model based on the Wigner distribution function formalism. Using the single-electron Hamiltonian and following the approach of Šimánek and Rebei (Phys. Rev. B 71:172405, 2005), we derive the coupled differential equations for transverse spin accumulation components and then calculate its contribution to the resistance of a domain wall. The results show that both the Rashba and the Dresselhaus spin–orbit interactions enhance the transverse spin accumulation and consequently increase the domain wall resistance.
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Researchers
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Nayere Tajielyato (Third Researcher), Majid Ghanaatshoar (Second Researcher), Vahid Fallahi (First Researcher)
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