مشخصات پژوهش

صفحه نخست /The Rashba- and ...
عنوان The Rashba- and Dresselhaus-Induced Spin Accumulation in the Diluted Magnetic Semiconductor Nanowire Containing a Domain Wall
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها Domain walls · Semiconductor nanowires · Spin accumulation · Spin–orbit coupling
چکیده We have investigated the influence of spin accumulation on the domain wall resistance in the presence of the Rashba and the Dresselhaus spin–orbit interactions. In this order, we have employed a quantum kinetic model based on the Wigner distribution function formalism. Using the single-electron Hamiltonian and following the approach of Šimánek and Rebei (Phys. Rev. B 71:172405, 2005), we derive the coupled differential equations for transverse spin accumulation components and then calculate its contribution to the resistance of a domain wall. The results show that both the Rashba and the Dresselhaus spin–orbit interactions enhance the transverse spin accumulation and consequently increase the domain wall resistance.
پژوهشگران وحید فلاحی (نفر اول)، مجید قناعت شعار (نفر دوم)، نیره تاجی الیاتو (نفر سوم)