عنوان	Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors
نوع پژوهش	مقاله چاپ شده
کلیدواژه‌ها	Anisotropic magnetoresistance (AMR), antiferromagnetic (AFM), ferromagnetic (FM), magnetic anisotropy, magnetic sensor planar Hall effect
چکیده	In this paper, we present a new material stack for planar Hall effect bridge (PHEB) sensors and a detailed investigation of the sensitivity and noise properties of PHEB sensors made from these. The sputter deposited material stack was based on a ferromagnetic (FM) NiFe sensing layer surrounded by two layers of anti-FM IrMn. This material stack enables implementation of a thick NiFe layer without loss of sensitivity. We present an improvement in detectivity in the PHEB by changing the shape and the materials of the corners between the sensors in a meander shape. A significant reduction of noise also comes from the thick NiFe layer, due to the reduced resistance of the sensor.
پژوهشگران	وحید فلاحی (نفر پنجم)، سید مجید محسنی ارمکی (نفر چهارم)، Johan Åkerman (نفر ششم به بعد)، Quang Tuan Le (نفر ششم به بعد)، Sunjea Chung (نفر ششم به بعد)، Fatjon Qejvanaj (نفر اول)، Muhammad Zubair (نفر دوم)، Jan A. Persson (نفر سوم)، Sohrab Redjai Sani (نفر ششم به بعد)، Fredrik Magnusson (نفر ششم به بعد)